Preparation of Remote Plasma Atomic Layer-Deposited HfO(2) Thin Films with High Charge Trapping Densities and Their Application in Nonvolatile Memory Devices

Optimization of equipment structure and process conditions is essential to obtain thin films with the required properties, such as film thickness, trapped charge density, leakage current, and memory characteristics, that ensure reliability of the corresponding device. In this study, we fabricated me...

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Detalles Bibliográficos
Autores principales: Yoo, Jae-Hoon, Park, Won-Ji, Kim, So-Won, Lee, Ga-Ram, Kim, Jong-Hwan, Lee, Joung-Ho, Uhm, Sae-Hoon, Lee, Hee-Chul
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254822/
https://www.ncbi.nlm.nih.gov/pubmed/37299688
http://dx.doi.org/10.3390/nano13111785

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254822/
https://www.ncbi.nlm.nih.gov/pubmed/37299688
http://dx.doi.org/10.3390/nano13111785

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