Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric

In this study, a high-K material, aluminum oxide (AlO(x)), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, w...

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Detalles Bibliográficos
Autores principales: Fang, Po-Hsiang, Kuo, Peng-Lin, Wang, Yu-Wu, Cheng, Horng-Long, Chou, Wei-Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10255236/
https://www.ncbi.nlm.nih.gov/pubmed/37299220
http://dx.doi.org/10.3390/polym15112421

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10255236/
https://www.ncbi.nlm.nih.gov/pubmed/37299220
http://dx.doi.org/10.3390/polym15112421

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