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Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric

In this study, a high-K material, aluminum oxide (AlO(x)), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, w...

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Autores principales: Fang, Po-Hsiang, Kuo, Peng-Lin, Wang, Yu-Wu, Cheng, Horng-Long, Chou, Wei-Yang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10255236/
https://www.ncbi.nlm.nih.gov/pubmed/37299220
http://dx.doi.org/10.3390/polym15112421
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author Fang, Po-Hsiang
Kuo, Peng-Lin
Wang, Yu-Wu
Cheng, Horng-Long
Chou, Wei-Yang
author_facet Fang, Po-Hsiang
Kuo, Peng-Lin
Wang, Yu-Wu
Cheng, Horng-Long
Chou, Wei-Yang
author_sort Fang, Po-Hsiang
collection PubMed
description In this study, a high-K material, aluminum oxide (AlO(x)), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, we modified the gate dielectric of OFETs using polyimide (PI) with different solid contents to tune the properties and reduce the trap state density of the gate dielectric, leading to controllable stability in the N, N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C(13))-based OFETs. Thus, gate field-induced stress can be compensated for by the carriers accumulated due to the dipole field created by electric dipoles within the PI layer, thereby improving the OFET’s performance and stability. Moreover, if the OFET is modified by PI with different solid contents, it can operate more stably under fixed gate bias stress over time than the device with AlO(x) as the dielectric layer only can. Furthermore, the OFET-based memory devices with PI film showed good memory retention and durability. In summary, we successfully fabricated a low-voltage operating and stable OFET and an organic memory device in which the memory window has potential for industrial production.
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spelling pubmed-102552362023-06-10 Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric Fang, Po-Hsiang Kuo, Peng-Lin Wang, Yu-Wu Cheng, Horng-Long Chou, Wei-Yang Polymers (Basel) Article In this study, a high-K material, aluminum oxide (AlO(x)), as the dielectric of organic field-effect transistors (OFETs) was used to reduce the threshold and operating voltages, while focusing on achieving high-electrical-stability OFETs and retention in OFET-based memory devices. To achieve this, we modified the gate dielectric of OFETs using polyimide (PI) with different solid contents to tune the properties and reduce the trap state density of the gate dielectric, leading to controllable stability in the N, N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (PTCDI-C(13))-based OFETs. Thus, gate field-induced stress can be compensated for by the carriers accumulated due to the dipole field created by electric dipoles within the PI layer, thereby improving the OFET’s performance and stability. Moreover, if the OFET is modified by PI with different solid contents, it can operate more stably under fixed gate bias stress over time than the device with AlO(x) as the dielectric layer only can. Furthermore, the OFET-based memory devices with PI film showed good memory retention and durability. In summary, we successfully fabricated a low-voltage operating and stable OFET and an organic memory device in which the memory window has potential for industrial production. MDPI 2023-05-23 /pmc/articles/PMC10255236/ /pubmed/37299220 http://dx.doi.org/10.3390/polym15112421 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fang, Po-Hsiang
Kuo, Peng-Lin
Wang, Yu-Wu
Cheng, Horng-Long
Chou, Wei-Yang
Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric
title Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric
title_full Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric
title_fullStr Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric
title_full_unstemmed Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric
title_short Enhancement of Stability in n-Channel OFETs by Modulating Polymeric Dielectric
title_sort enhancement of stability in n-channel ofets by modulating polymeric dielectric
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10255236/
https://www.ncbi.nlm.nih.gov/pubmed/37299220
http://dx.doi.org/10.3390/polym15112421
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