Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser Annealing

Transistor scaling has become increasingly difficult in the dynamic random access memory (DRAM). However, vertical devices will be good candidates for 4F(2) DRAM cell transistors (F = pitch/2). Most vertical devices are facing some technical challenges. For example, the gate length cannot be precise...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Zhuo, Zhu, Huilong, Wang, Guilei, Wang, Qi, Xiao, Zhongrui, Zhang, Yongkui, Liu, Jinbiao, Lu, Shunshun, Du, Yong, Yu, Jiahan, Xiong, Wenjuan, Kong, Zhenzhen, Du, Anyan, Yan, Zijin, Zheng, Yantong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10255437/
https://www.ncbi.nlm.nih.gov/pubmed/37299689
http://dx.doi.org/10.3390/nano13111786

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10255437/
https://www.ncbi.nlm.nih.gov/pubmed/37299689
http://dx.doi.org/10.3390/nano13111786

Ejemplares similares