Dislocation and strain mapping in metamorphic parabolic-graded InGaAs buffers on GaAs

We investigate different architectures for parabolic-graded InGaAs metamorphic buffers grown on GaAs using transmission electron microscopy techniques. The different architectures include InGaP and AlInGaAs/InGaP superlattices with different GaAs substrate misorientations and the inclusion of a stra...

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Detalles Bibliográficos
Autores principales: Stephen, Nicholas, Kumar, Praveen, Gocalinska, Agnieszka, Mura, Enrica, Kepaptsoglou, Demie, Ramasse, Quentin, Pelucchi, Emanuele, Arredondo, Miryam
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Electronic Materials
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10261241/
https://www.ncbi.nlm.nih.gov/pubmed/37323808
http://dx.doi.org/10.1007/s10853-023-08597-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10261241/
https://www.ncbi.nlm.nih.gov/pubmed/37323808
http://dx.doi.org/10.1007/s10853-023-08597-y

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