High p doped and robust band structure in Mg-doped hexagonal boron nitride

In two dimensional materials, substitutional doping during growth can be used to alter the electronic properties. Here, we report on the stable growth of p-type hexagonal boron nitride (h-BN) using Mg-atoms as substitutional impurities in the h-BN honeycomb lattice. We use micro-Raman spectroscopy,...

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Detalles Bibliográficos
Autores principales: Khalil, Lama, Ernandes, Cyrine, Avila, José, Rousseau, Adrien, Dudin, Pavel, Zhigadlo, Nikolai D., Cassabois, Guillaume, Gil, Bernard, Oehler, Fabrice, Chaste, Julien, Ouerghi, Abdelkarim
Formato: Online Artículo Texto
Lenguaje:English
Publicado: RSC 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10262975/
https://www.ncbi.nlm.nih.gov/pubmed/37325527
http://dx.doi.org/10.1039/d2na00843b

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10262975/
https://www.ncbi.nlm.nih.gov/pubmed/37325527
http://dx.doi.org/10.1039/d2na00843b

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