Optically Reconfigurable Complementary Logic Gates Enabled by Bipolar Photoresponse in Gallium Selenide Memtransistor

To avoid the complexity of the circuit for in‐memory computing, simultaneous execution of multiple logic gates (OR, AND, NOR, and NAND) and memory behavior are demonstrated in a single device of oxygen plasma‐treated gallium selenide (GaSe) memtransistor. Resistive switching behavior with R(ON)/R(OF...

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Detalles Bibliográficos
Autores principales: Rehman, Shania, Khan, Muhammad Asghar, Kim, Honggyun, Patil, Harshada, Aziz, Jamal, Kadam, Kalyani D., Rehman, Malik Abdul, Rabeel, Muhammad, Hao, Aize, Khan, Karim, Kim, Sungho, Eom, Jonghwa, Kim, Deok‐kee, Khan, Muhammad Farooq
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265048/
https://www.ncbi.nlm.nih.gov/pubmed/37076923
http://dx.doi.org/10.1002/advs.202205383

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265048/
https://www.ncbi.nlm.nih.gov/pubmed/37076923
http://dx.doi.org/10.1002/advs.202205383

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