Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)

GaN Nanoscale Air Channel Diodes In article number 2206385 by Mo Li and co‐workers, a vertical GaN nanodiode with a 50 nm air channel is reported, fabricated using IC‐compatible technologies, with a record field emission current of 11 mA@10 V. Notably, the device displays outstanding stability and f...

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Detalles Bibliográficos
Autores principales: Wei, Yazhou, Chen, Feiliang, Huang, Ruihan, Zhao, Jianpeng, Zhao, Haiquan, Wang, Jiachao, Li, Mo, Zhang, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Frontispiece
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265095/
http://dx.doi.org/10.1002/advs.202370108

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265095/
http://dx.doi.org/10.1002/advs.202370108

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