Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)

GaN Nanoscale Air Channel Diodes In article number 2206385 by Mo Li and co‐workers, a vertical GaN nanodiode with a 50 nm air channel is reported, fabricated using IC‐compatible technologies, with a record field emission current of 11 mA@10 V. Notably, the device displays outstanding stability and f...

Descripción completa

Detalles Bibliográficos
Autores principales: Wei, Yazhou, Chen, Feiliang, Huang, Ruihan, Zhao, Jianpeng, Zhao, Haiquan, Wang, Jiachao, Li, Mo, Zhang, Jian
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Frontispiece
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265095/
http://dx.doi.org/10.1002/advs.202370108
_version_ 1785058459436187648
author Wei, Yazhou
Chen, Feiliang
Huang, Ruihan
Zhao, Jianpeng
Zhao, Haiquan
Wang, Jiachao
Li, Mo
Zhang, Jian
author_facet Wei, Yazhou
Chen, Feiliang
Huang, Ruihan
Zhao, Jianpeng
Zhao, Haiquan
Wang, Jiachao
Li, Mo
Zhang, Jian
author_sort Wei, Yazhou
collection PubMed
description GaN Nanoscale Air Channel Diodes In article number 2206385 by Mo Li and co‐workers, a vertical GaN nanodiode with a 50 nm air channel is reported, fabricated using IC‐compatible technologies, with a record field emission current of 11 mA@10 V. Notably, the device displays outstanding stability and fast switching characteristics with a sub‐10 ns response time. Additionally, the temperature‐dependent performance can guide the design of nano‐air‐channel‐devices for applications in extreme conditions. [Image: see text]
format Online
Article
Text
id pubmed-10265095
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-102650952023-06-15 Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023) Wei, Yazhou Chen, Feiliang Huang, Ruihan Zhao, Jianpeng Zhao, Haiquan Wang, Jiachao Li, Mo Zhang, Jian Adv Sci (Weinh) Frontispiece GaN Nanoscale Air Channel Diodes In article number 2206385 by Mo Li and co‐workers, a vertical GaN nanodiode with a 50 nm air channel is reported, fabricated using IC‐compatible technologies, with a record field emission current of 11 mA@10 V. Notably, the device displays outstanding stability and fast switching characteristics with a sub‐10 ns response time. Additionally, the temperature‐dependent performance can guide the design of nano‐air‐channel‐devices for applications in extreme conditions. [Image: see text] John Wiley and Sons Inc. 2023-06-14 /pmc/articles/PMC10265095/ http://dx.doi.org/10.1002/advs.202370108 Text en © 2023 Wiley‐VCH GmbH https://creativecommons.org/licenses/by-nc/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by-nc/4.0/ (https://creativecommons.org/licenses/by-nc/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
spellingShingle Frontispiece
Wei, Yazhou
Chen, Feiliang
Huang, Ruihan
Zhao, Jianpeng
Zhao, Haiquan
Wang, Jiachao
Li, Mo
Zhang, Jian
Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)
title Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)
title_full Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)
title_fullStr Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)
title_full_unstemmed Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)
title_short Fast Response GaN Nanoscale Air Channel Diodes with Highly Stable 10 mA Output Current toward Wafer‐Scale Fabrication (Adv. Sci. 17/2023)
title_sort fast response gan nanoscale air channel diodes with highly stable 10 ma output current toward wafer‐scale fabrication (adv. sci. 17/2023)
topic Frontispiece
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10265095/
http://dx.doi.org/10.1002/advs.202370108
work_keys_str_mv AT weiyazhou fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023
AT chenfeiliang fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023
AT huangruihan fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023
AT zhaojianpeng fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023
AT zhaohaiquan fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023
AT wangjiachao fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023
AT limo fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023
AT zhangjian fastresponsegannanoscaleairchanneldiodeswithhighlystable10maoutputcurrenttowardwaferscalefabricationadvsci172023

Ejemplares similares