Resonant plasmonic detection of terahertz radiation in field-effect transistors with the graphene channel and the black-As[Formula: see text] P[Formula: see text] gate layer

We propose the terahertz (THz) detectors based on field-effect transistors (FETs) with the graphene channel (GC) and the black-Arsenic (b-As) black-Phosphorus (b-P), or black-Arsenic-Phosphorus (b-As[Formula: see text] P[Formula: see text] ) gate barrier layer. The operation of the GC-FET detectors...

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Detalles Bibliográficos
Autores principales: Ryzhii, V., Tang, C., Otsuji, T., Ryzhii, M., Mitin, V., Shur, M. S.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10267188/
https://www.ncbi.nlm.nih.gov/pubmed/37316517
http://dx.doi.org/10.1038/s41598-023-36802-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10267188/
https://www.ncbi.nlm.nih.gov/pubmed/37316517
http://dx.doi.org/10.1038/s41598-023-36802-0

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