Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten

[Image: see text] 3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer b...

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Detalles Bibliográficos
Autores principales: Svensson, Johannes, Olausson, Patrik, Menon, Heera, Lehmann, Sebastian, Lind, Erik, Borg, Mattias
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10273455/
https://www.ncbi.nlm.nih.gov/pubmed/37227403
http://dx.doi.org/10.1021/acs.nanolett.2c04908

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10273455/
https://www.ncbi.nlm.nih.gov/pubmed/37227403
http://dx.doi.org/10.1021/acs.nanolett.2c04908

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