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Three-Dimensional Integration of InAs Nanowires by Template-Assisted Selective Epitaxy on Tungsten
[Image: see text] 3D integration of III-V semiconductors with Si CMOS is highly attractive since it allows combining new functions such as photonic and analog devices with digital signal processing circuitry. Thus far, most 3D integration approaches have used epitaxial growth on Si, layer transfer b...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10273455/ https://www.ncbi.nlm.nih.gov/pubmed/37227403 http://dx.doi.org/10.1021/acs.nanolett.2c04908 |