Oxygen functionalized InSe and TlTe two-dimensional materials: transition from tunable bandgap semiconductors to quantum spin Hall insulators

From first-principles calculations, we found that oxygen functionalized InSe and TlTe two-dimensional materials undergo the following changes with the increased concentrations of oxygen coverage, transforming from indirect bandgap semiconductors to direct bandgap semiconductors with tunable bandgap,...

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Detalles Bibliográficos
Autores principales: Lu, Qing, Li, Lin, Luo, Shilin, Wang, Yue, Wang, Busheng, Liu, Fu-Ti
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society of Chemistry 2023
Materias:
Chemistry
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10284147/
https://www.ncbi.nlm.nih.gov/pubmed/37350867
http://dx.doi.org/10.1039/d3ra02518g

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10284147/
https://www.ncbi.nlm.nih.gov/pubmed/37350867
http://dx.doi.org/10.1039/d3ra02518g

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