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Oxygen functionalized InSe and TlTe two-dimensional materials: transition from tunable bandgap semiconductors to quantum spin Hall insulators
From first-principles calculations, we found that oxygen functionalized InSe and TlTe two-dimensional materials undergo the following changes with the increased concentrations of oxygen coverage, transforming from indirect bandgap semiconductors to direct bandgap semiconductors with tunable bandgap,...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
The Royal Society of Chemistry
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10284147/ https://www.ncbi.nlm.nih.gov/pubmed/37350867 http://dx.doi.org/10.1039/d3ra02518g |