High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to...

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Detalles Bibliográficos
Autores principales: Chandrasekaran, Vigneshwaran, Titze, Michael, Flores, Anthony R., Campbell, Deanna, Henshaw, Jacob, Jones, Andrew C., Bielejec, Edward S., Htoon, Han
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Research Articles
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288259/
https://www.ncbi.nlm.nih.gov/pubmed/37088736
http://dx.doi.org/10.1002/advs.202300190

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288259/
https://www.ncbi.nlm.nih.gov/pubmed/37088736
http://dx.doi.org/10.1002/advs.202300190

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