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High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
John Wiley and Sons Inc.
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288259/ https://www.ncbi.nlm.nih.gov/pubmed/37088736 http://dx.doi.org/10.1002/advs.202300190 |
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author | Chandrasekaran, Vigneshwaran Titze, Michael Flores, Anthony R. Campbell, Deanna Henshaw, Jacob Jones, Andrew C. Bielejec, Edward S. Htoon, Han |
author_facet | Chandrasekaran, Vigneshwaran Titze, Michael Flores, Anthony R. Campbell, Deanna Henshaw, Jacob Jones, Andrew C. Bielejec, Edward S. Htoon, Han |
author_sort | Chandrasekaran, Vigneshwaran |
collection | PubMed |
description | Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non‐classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies. |
format | Online Article Text |
id | pubmed-10288259 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | John Wiley and Sons Inc. |
record_format | MEDLINE/PubMed |
spelling | pubmed-102882592023-06-24 High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback Chandrasekaran, Vigneshwaran Titze, Michael Flores, Anthony R. Campbell, Deanna Henshaw, Jacob Jones, Andrew C. Bielejec, Edward S. Htoon, Han Adv Sci (Weinh) Research Articles Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non‐classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies. John Wiley and Sons Inc. 2023-04-23 /pmc/articles/PMC10288259/ /pubmed/37088736 http://dx.doi.org/10.1002/advs.202300190 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited. |
spellingShingle | Research Articles Chandrasekaran, Vigneshwaran Titze, Michael Flores, Anthony R. Campbell, Deanna Henshaw, Jacob Jones, Andrew C. Bielejec, Edward S. Htoon, Han High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
title | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
title_full | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
title_fullStr | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
title_full_unstemmed | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
title_short | High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback |
title_sort | high‐yield deterministic focused ion beam implantation of quantum defects enabled by in situ photoluminescence feedback |
topic | Research Articles |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288259/ https://www.ncbi.nlm.nih.gov/pubmed/37088736 http://dx.doi.org/10.1002/advs.202300190 |
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