Cargando…

High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback

Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to...

Descripción completa

Detalles Bibliográficos
Autores principales: Chandrasekaran, Vigneshwaran, Titze, Michael, Flores, Anthony R., Campbell, Deanna, Henshaw, Jacob, Jones, Andrew C., Bielejec, Edward S., Htoon, Han
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288259/
https://www.ncbi.nlm.nih.gov/pubmed/37088736
http://dx.doi.org/10.1002/advs.202300190
_version_ 1785062044287893504
author Chandrasekaran, Vigneshwaran
Titze, Michael
Flores, Anthony R.
Campbell, Deanna
Henshaw, Jacob
Jones, Andrew C.
Bielejec, Edward S.
Htoon, Han
author_facet Chandrasekaran, Vigneshwaran
Titze, Michael
Flores, Anthony R.
Campbell, Deanna
Henshaw, Jacob
Jones, Andrew C.
Bielejec, Edward S.
Htoon, Han
author_sort Chandrasekaran, Vigneshwaran
collection PubMed
description Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non‐classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies.
format Online
Article
Text
id pubmed-10288259
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher John Wiley and Sons Inc.
record_format MEDLINE/PubMed
spelling pubmed-102882592023-06-24 High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback Chandrasekaran, Vigneshwaran Titze, Michael Flores, Anthony R. Campbell, Deanna Henshaw, Jacob Jones, Andrew C. Bielejec, Edward S. Htoon, Han Adv Sci (Weinh) Research Articles Focused ion beam implantation is ideally suited for placing defect centers in wide bandgap semiconductors with nanometer spatial resolution. However, the fact that only a few percent of implanted defects can be activated to become efficient single photon emitters prevents this powerful capability to reach its full potential in photonic/electronic integration of quantum defects. Here an industry adaptive scalable technique is demonstrated to deterministically create single defects in commercial grade silicon carbide by performing repeated low ion number implantation and in situ photoluminescence evaluation after each round of implantation. An array of 9 single defects in 13 targeted locations is successfully created—a ≈70% yield which is more than an order of magnitude higher than achieved in a typical single pass ion implantation. The remaining emitters exhibit non‐classical photon emission statistics corresponding to the existence of at most two emitters. This approach can be further integrated with other advanced techniques such as in situ annealing and cryogenic operations to extend to other material platforms for various quantum information technologies. John Wiley and Sons Inc. 2023-04-23 /pmc/articles/PMC10288259/ /pubmed/37088736 http://dx.doi.org/10.1002/advs.202300190 Text en © 2023 The Authors. Advanced Science published by Wiley‐VCH GmbH https://creativecommons.org/licenses/by/4.0/This is an open access article under the terms of the http://creativecommons.org/licenses/by/4.0/ (https://creativecommons.org/licenses/by/4.0/) License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
spellingShingle Research Articles
Chandrasekaran, Vigneshwaran
Titze, Michael
Flores, Anthony R.
Campbell, Deanna
Henshaw, Jacob
Jones, Andrew C.
Bielejec, Edward S.
Htoon, Han
High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
title High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
title_full High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
title_fullStr High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
title_full_unstemmed High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
title_short High‐Yield Deterministic Focused Ion Beam Implantation of Quantum Defects Enabled by In Situ Photoluminescence Feedback
title_sort high‐yield deterministic focused ion beam implantation of quantum defects enabled by in situ photoluminescence feedback
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288259/
https://www.ncbi.nlm.nih.gov/pubmed/37088736
http://dx.doi.org/10.1002/advs.202300190
work_keys_str_mv AT chandrasekaranvigneshwaran highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback
AT titzemichael highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback
AT floresanthonyr highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback
AT campbelldeanna highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback
AT henshawjacob highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback
AT jonesandrewc highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback
AT bielejecedwards highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback
AT htoonhan highyielddeterministicfocusedionbeamimplantationofquantumdefectsenabledbyinsituphotoluminescencefeedback