Boron-Implanted Black Silicon Photodiode with Close-to-Ideal Responsivity from 200 to 1000 nm

[Image: see text] Detection of UV light has traditionally been a major challenge for Si photodiodes due to reflectance losses and junction recombination. Here we overcome these problems by combining a nanostructured surface with an optimized implanted junction and compare the obtained performance to...

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Detalles Bibliográficos
Autores principales: Setälä, Olli E., Chen, Kexun, Pasanen, Toni P., Liu, Xiaolong, Radfar, Behrad, Vähänissi, Ville, Savin, Hele
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288819/
https://www.ncbi.nlm.nih.gov/pubmed/37363632
http://dx.doi.org/10.1021/acsphotonics.2c01984

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10288819/
https://www.ncbi.nlm.nih.gov/pubmed/37363632
http://dx.doi.org/10.1021/acsphotonics.2c01984

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