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β-Ga(2)O(3) MOSFETs electrical characteristic study of various etching depths grown on sapphire substrate by MOCVD
β-Ga(2)O(3) thin films with both a 45 nm Si-doped conductive epilayer and unintentionally doped epilayer were grown on c-plane sapphire substrate by metalorganic chemical vapor deposition. β-Ga(2)O(3) based metal–oxide–semiconductor field-effect transistors (MOSFETs) were fabricated with gate recess...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10299964/ http://dx.doi.org/10.1186/s11671-023-03867-9 |