Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon—Electronic Properties of Configurational Transformations

The acceptor removal process is the most detrimental effect encountered in irradiated boron-doped silicon. This process is caused by a radiation-induced boron-containing donor (BCD) defect with bistable properties that are reflected in the electrical measurements performed in usual ambient laborator...

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Detalles Bibliográficos
Autores principales: Nitescu, Andrei, Besleaga, Cristina, Nemnes, George Alexandru, Pintilie, Ioana
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10300869/
https://www.ncbi.nlm.nih.gov/pubmed/37420887
http://dx.doi.org/10.3390/s23125725

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10300869/
https://www.ncbi.nlm.nih.gov/pubmed/37420887
http://dx.doi.org/10.3390/s23125725

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