Impact of Charge-Trapping Effects on Reliability Instability in Al(x)Ga(1−x)N/GaN High-Electron-Mobility Transistors with Various Al Compositions

In this study, we present a detailed analysis of trapping characteristics at the Al(x)Ga(1−x)N/GaN interface of Al(x)Ga(1−x)N/GaN high-electron-mobility transistors (HEMTs) with reliability assessments, demonstrating how the composition of the Al in the Al(x)Ga(1−x)N barrier impacts the performance...

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Detalles Bibliográficos
Autores principales: Amir, Walid, Chakraborty, Surajit, Kwon, Hyuk-Min, Kim, Tae-Woo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10301253/
https://www.ncbi.nlm.nih.gov/pubmed/37374651
http://dx.doi.org/10.3390/ma16124469

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10301253/
https://www.ncbi.nlm.nih.gov/pubmed/37374651
http://dx.doi.org/10.3390/ma16124469

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