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Superior High Transistor’s Effective Mobility of 325 cm(2)/V-s by 5 nm Quasi-Two-Dimensional SnON nFET
This work reports the first nanocrystalline SnON (7.6% nitrogen content) nanosheet n-type Field-Effect Transistor (nFET) with the transistor’s effective mobility (µ(eff)) as high as 357 and 325 cm(2)/V-s at electron density (Q(e)) of 5 × 10(12) cm(−2) and an ultra-thin body thickness (T(body)) of 7...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10301955/ https://www.ncbi.nlm.nih.gov/pubmed/37368322 http://dx.doi.org/10.3390/nano13121892 |