Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors

Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scaling challenges because of their one-transistor (1T) memory be...

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Detalles Bibliográficos
Autores principales: Jeon, Juhee, Cho, Kyoungah, Kim, Sangsig
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302018/
https://www.ncbi.nlm.nih.gov/pubmed/37374723
http://dx.doi.org/10.3390/mi14061138

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302018/
https://www.ncbi.nlm.nih.gov/pubmed/37374723
http://dx.doi.org/10.3390/mi14061138

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