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Disturbance Characteristics of 1T DRAM Arrays Consisting of Feedback Field-Effect Transistors
Challenges in scaling dynamic random-access memory (DRAM) have become a crucial problem for implementing high-density and high-performance memory devices. Feedback field-effect transistors (FBFETs) have great potential to overcome the scaling challenges because of their one-transistor (1T) memory be...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302018/ https://www.ncbi.nlm.nih.gov/pubmed/37374723 http://dx.doi.org/10.3390/mi14061138 |