Multi-Level Resistive Al/Ga(2)O(3)/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing

Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high den...

Descripción completa

Detalles Bibliográficos
Autores principales: Wang, Li-Wen, Huang, Chih-Wei, Lee, Ke-Jing, Chu, Sheng-Yuan, Wang, Yeong-Her
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302128/
https://www.ncbi.nlm.nih.gov/pubmed/37368281
http://dx.doi.org/10.3390/nano13121851

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302128/
https://www.ncbi.nlm.nih.gov/pubmed/37368281
http://dx.doi.org/10.3390/nano13121851

Ejemplares similares