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Multi-Level Resistive Al/Ga(2)O(3)/ITO Switching Devices with Interlayers of Graphene Oxide for Neuromorphic Computing
Recently, resistive random access memory (RRAM) has been an outstanding candidate among various emerging nonvolatile memories for high-density storage and in-memory computing applications. However, traditional RRAM, which accommodates two states depending on applied voltage, cannot meet the high den...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302128/ https://www.ncbi.nlm.nih.gov/pubmed/37368281 http://dx.doi.org/10.3390/nano13121851 |