Carrier Trap Density Reduction at SiO(2)/4H-Silicon Carbide Interface with Annealing Processes in Phosphoryl Chloride and Nitride Oxide Atmospheres

The electrical and physical properties of the SiC/SiO(2) interfaces are critical for the reliability and performance of SiC-based MOSFETs. Optimizing the oxidation and post-oxidation processes is the most promising method of improving oxide quality, channel mobility, and thus the series resistance o...

Descripción completa

Detalles Bibliográficos
Autores principales: Brzozowski, Ernest, Kaminski, Maciej, Taube, Andrzej, Sadowski, Oskar, Krol, Krystian, Guziewicz, Marek
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302522/
https://www.ncbi.nlm.nih.gov/pubmed/37374564
http://dx.doi.org/10.3390/ma16124381

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302522/
https://www.ncbi.nlm.nih.gov/pubmed/37374564
http://dx.doi.org/10.3390/ma16124381

Ejemplares similares