High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the Nanoscale

At sub-3 nm nodes, the scaling of lateral devices represented by a fin field-effect transistor (FinFET) and gate-all-around field effect transistors (GAAFET) faces increasing technical challenges. At the same time, the development of vertical devices in the three-dimensional direction has excellent...

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Detalles Bibliográficos
Autores principales: Chen, Zhuo, Zhu, Huilong, Wang, Guilei, Wang, Qi, Xiao, Zhongrui, Zhang, Yongkui, Liu, Jinbiao, Lu, Shunshun, Du, Yong, Yu, Jiahan, Xiong, Wenjuan, Kong, Zhenzhen, Du, Anyan, Yan, Zijin, Zheng, Yantong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302810/
https://www.ncbi.nlm.nih.gov/pubmed/37368297
http://dx.doi.org/10.3390/nano13121867

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10302810/
https://www.ncbi.nlm.nih.gov/pubmed/37368297
http://dx.doi.org/10.3390/nano13121867

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