AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO(2) as Passivation and Dielectric Layers

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. The TiO(2) film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electro...

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Detalles Bibliográficos
Autores principales: Lin, Yu-Shyan, Lu, Chi-Che
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303008/
https://www.ncbi.nlm.nih.gov/pubmed/37374767
http://dx.doi.org/10.3390/mi14061183

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303008/
https://www.ncbi.nlm.nih.gov/pubmed/37374767
http://dx.doi.org/10.3390/mi14061183

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