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AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO(2) as Passivation and Dielectric Layers
This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. The TiO(2) film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electro...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303008/ https://www.ncbi.nlm.nih.gov/pubmed/37374767 http://dx.doi.org/10.3390/mi14061183 |
Sumario: | This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. The TiO(2) film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N(2). Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics. |
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