Cargando…

AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO(2) as Passivation and Dielectric Layers

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. The TiO(2) film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electro...

Descripción completa

Detalles Bibliográficos
Autores principales: Lin, Yu-Shyan, Lu, Chi-Che
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303008/
https://www.ncbi.nlm.nih.gov/pubmed/37374767
http://dx.doi.org/10.3390/mi14061183
Descripción
Sumario:This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. The TiO(2) film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electron microscopy (TEM). The quality of the gate oxide is improved by annealing at 300 °C in N(2). Experimental results indicate that the annealed MOS structure effectively reduces the gate leakage current. The high performance of the annealed MOS-HEMTs and their stable operation at elevated temperatures up to 450 K is demonstrated. Furthermore, annealing improves their output power characteristics.