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AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors with Annealed TiO(2) as Passivation and Dielectric Layers

This paper reports on improved AlGaN/GaN metal oxide semiconductor high-electron mobility transistors (MOS-HEMTs). TiO(2) is used to form the dielectric and passivation layers. The TiO(2) film is characterized using X-ray photoemission spectroscopy (XPS), Raman spectroscopy, and transmission electro...

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Detalles Bibliográficos
Autores principales:	Lin, Yu-Shyan, Lu, Chi-Che
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303008/ https://www.ncbi.nlm.nih.gov/pubmed/37374767 http://dx.doi.org/10.3390/mi14061183

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