A FIN-LDMOS with Bulk Electron Accumulation Effect

A thin Silicon-On-Insulator (SOI) LDMOS with ultralow Specific On-Resistance (R(on,sp)) is proposed, and the physical mechanism is investigated by Sentaurus. It features a FIN gate and an extended superjunction trench gate to obtain a Bulk Electron Accumulation (BEA) effect. The BEA consists of two...

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Detalles Bibliográficos
Autores principales: Chen, Weizhong, Duan, Zubing, Zhang, Hongsheng, Han, Zhengsheng, Wang, Zeheng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303072/
https://www.ncbi.nlm.nih.gov/pubmed/37374809
http://dx.doi.org/10.3390/mi14061225

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303072/
https://www.ncbi.nlm.nih.gov/pubmed/37374809
http://dx.doi.org/10.3390/mi14061225

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