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An Experimental Study of Dislocation Dynamics in GaN
The dynamics of dislocations introduced through indentation or scratching at room temperature into a few GaN layers that were grown using the HVPE, MOCVD and ELOG methods and had different dislocation densities were studied via the electron-beam-induced current and cathodoluminescence methods. The e...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303180/ https://www.ncbi.nlm.nih.gov/pubmed/37374774 http://dx.doi.org/10.3390/mi14061190 |