AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that...

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Detalles Bibliográficos
Autores principales: Sakharov, Alexei V., Arteev, Dmitri S., Zavarin, Evgenii E., Nikolaev, Andrey E., Lundin, Wsevolod V., Prasolov, Nikita D., Yagovkina, Maria A., Tsatsulnikov, Andrey F., Fedotov, Sergey D., Sokolov, Evgenii M., Statsenko, Vladimir N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303388/
https://www.ncbi.nlm.nih.gov/pubmed/37374449
http://dx.doi.org/10.3390/ma16124265

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303388/
https://www.ncbi.nlm.nih.gov/pubmed/37374449
http://dx.doi.org/10.3390/ma16124265

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