AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that...

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Detalles Bibliográficos
Autores principales: Sakharov, Alexei V., Arteev, Dmitri S., Zavarin, Evgenii E., Nikolaev, Andrey E., Lundin, Wsevolod V., Prasolov, Nikita D., Yagovkina, Maria A., Tsatsulnikov, Andrey F., Fedotov, Sergey D., Sokolov, Evgenii M., Statsenko, Vladimir N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303388/
https://www.ncbi.nlm.nih.gov/pubmed/37374449
http://dx.doi.org/10.3390/ma16124265
Descripción
Sumario:A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.

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