AlGaN HEMT Structures Grown on Miscut Si(111) Wafers

A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that...

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Autores principales: Sakharov, Alexei V., Arteev, Dmitri S., Zavarin, Evgenii E., Nikolaev, Andrey E., Lundin, Wsevolod V., Prasolov, Nikita D., Yagovkina, Maria A., Tsatsulnikov, Andrey F., Fedotov, Sergey D., Sokolov, Evgenii M., Statsenko, Vladimir N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303388/
https://www.ncbi.nlm.nih.gov/pubmed/37374449
http://dx.doi.org/10.3390/ma16124265
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author Sakharov, Alexei V.
Arteev, Dmitri S.
Zavarin, Evgenii E.
Nikolaev, Andrey E.
Lundin, Wsevolod V.
Prasolov, Nikita D.
Yagovkina, Maria A.
Tsatsulnikov, Andrey F.
Fedotov, Sergey D.
Sokolov, Evgenii M.
Statsenko, Vladimir N.
author_facet Sakharov, Alexei V.
Arteev, Dmitri S.
Zavarin, Evgenii E.
Nikolaev, Andrey E.
Lundin, Wsevolod V.
Prasolov, Nikita D.
Yagovkina, Maria A.
Tsatsulnikov, Andrey F.
Fedotov, Sergey D.
Sokolov, Evgenii M.
Statsenko, Vladimir N.
author_sort Sakharov, Alexei V.
collection PubMed
description A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility.
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spelling pubmed-103033882023-06-29 AlGaN HEMT Structures Grown on Miscut Si(111) Wafers Sakharov, Alexei V. Arteev, Dmitri S. Zavarin, Evgenii E. Nikolaev, Andrey E. Lundin, Wsevolod V. Prasolov, Nikita D. Yagovkina, Maria A. Tsatsulnikov, Andrey F. Fedotov, Sergey D. Sokolov, Evgenii M. Statsenko, Vladimir N. Materials (Basel) Article A complex study was performed on a set of AlGaN/GaN high-electron-mobility transistor structures grown by metalorganic vapor phase epitaxy on miscut Si(111) wafers with a highly resistive epitaxial Si layer to investigate the influence of substrate miscut on their properties. The results showed that wafer misorientation had an influence on the strain evolution during the growth and surface morphology, and could have a strong impact on the mobility of 2D electron gas, with a weak optimum at 0.5° miscut angle. A numerical analysis revealed that the interface roughness was a main parameter responsible for the variation in electron mobility. MDPI 2023-06-08 /pmc/articles/PMC10303388/ /pubmed/37374449 http://dx.doi.org/10.3390/ma16124265 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Sakharov, Alexei V.
Arteev, Dmitri S.
Zavarin, Evgenii E.
Nikolaev, Andrey E.
Lundin, Wsevolod V.
Prasolov, Nikita D.
Yagovkina, Maria A.
Tsatsulnikov, Andrey F.
Fedotov, Sergey D.
Sokolov, Evgenii M.
Statsenko, Vladimir N.
AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
title AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
title_full AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
title_fullStr AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
title_full_unstemmed AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
title_short AlGaN HEMT Structures Grown on Miscut Si(111) Wafers
title_sort algan hemt structures grown on miscut si(111) wafers
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303388/
https://www.ncbi.nlm.nih.gov/pubmed/37374449
http://dx.doi.org/10.3390/ma16124265
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