Review of Electrochemically Synthesized Resistive Switching Devices: Memory Storage, Neuromorphic Computing, and Sensing Applications

Resistive-switching-based memory devices meet most of the requirements for use in next-generation information and communication technology applications, including standalone memory devices, neuromorphic hardware, and embedded sensing devices with on-chip storage, due to their low cost, excellent mem...

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Detalles Bibliográficos
Autores principales: Kundale, Somnath S., Kamble, Girish U., Patil, Pradnya P., Patil, Snehal L., Rokade, Kasturi A., Khot, Atul C., Nirmal, Kiran A., Kamat, Rajanish K., Kim, Kyeong Heon, An, Ho-Myoung, Dongale, Tukaram D., Kim, Tae Geun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Review
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303625/
https://www.ncbi.nlm.nih.gov/pubmed/37368309
http://dx.doi.org/10.3390/nano13121879

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303625/
https://www.ncbi.nlm.nih.gov/pubmed/37368309
http://dx.doi.org/10.3390/nano13121879

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