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Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP

Gallium nitride (GaN) power devices have many benefits, including high power density, small footprint, high operating voltage, and excellent power gain capability. However, in contrast to silicon carbide (SiC), its performance and reliability can be negatively impacted by its low thermal conductivit...

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Detalles Bibliográficos
Autores principales: Yan, Lei, Liu, Peisheng, Xu, Pengpeng, Tan, Lipeng, Zhang, Zhao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303685/
https://www.ncbi.nlm.nih.gov/pubmed/37374830
http://dx.doi.org/10.3390/mi14061245
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author Yan, Lei
Liu, Peisheng
Xu, Pengpeng
Tan, Lipeng
Zhang, Zhao
author_facet Yan, Lei
Liu, Peisheng
Xu, Pengpeng
Tan, Lipeng
Zhang, Zhao
author_sort Yan, Lei
collection PubMed
description Gallium nitride (GaN) power devices have many benefits, including high power density, small footprint, high operating voltage, and excellent power gain capability. However, in contrast to silicon carbide (SiC), its performance and reliability can be negatively impacted by its low thermal conductivity, which can cause overheating. Hence, it is necessary to provide a reliable and workable thermal management model. In this paper, a model of a flip-chip packing (FCP) GaN chip was established, and it was assigned to the Ag sinter paste structure. The different solder bumps and under bump metallurgy (UBM) were considered. The results indicated that the FCP GaN chip with underfill was a promising method because it not only reduced the size of the package model but also reduced thermal stress. When the chip was in operation, the thermal stress was about 79 MPa, only 38.77% of the Ag sinter paste structure, lower than any of the GaN chip packaging methods currently in use. Moreover, the thermal condition of the module often has little to do with the material of the UBM. Additionally, nano-silver was found to be the most suitable bump material for FCP GaN chip. Temperature shock experiments were also conducted with different UBM materials when nano-silver was used as bump. It was found that Al as UBM is a more reliable option.
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spelling pubmed-103036852023-06-29 Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP Yan, Lei Liu, Peisheng Xu, Pengpeng Tan, Lipeng Zhang, Zhao Micromachines (Basel) Article Gallium nitride (GaN) power devices have many benefits, including high power density, small footprint, high operating voltage, and excellent power gain capability. However, in contrast to silicon carbide (SiC), its performance and reliability can be negatively impacted by its low thermal conductivity, which can cause overheating. Hence, it is necessary to provide a reliable and workable thermal management model. In this paper, a model of a flip-chip packing (FCP) GaN chip was established, and it was assigned to the Ag sinter paste structure. The different solder bumps and under bump metallurgy (UBM) were considered. The results indicated that the FCP GaN chip with underfill was a promising method because it not only reduced the size of the package model but also reduced thermal stress. When the chip was in operation, the thermal stress was about 79 MPa, only 38.77% of the Ag sinter paste structure, lower than any of the GaN chip packaging methods currently in use. Moreover, the thermal condition of the module often has little to do with the material of the UBM. Additionally, nano-silver was found to be the most suitable bump material for FCP GaN chip. Temperature shock experiments were also conducted with different UBM materials when nano-silver was used as bump. It was found that Al as UBM is a more reliable option. MDPI 2023-06-13 /pmc/articles/PMC10303685/ /pubmed/37374830 http://dx.doi.org/10.3390/mi14061245 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Yan, Lei
Liu, Peisheng
Xu, Pengpeng
Tan, Lipeng
Zhang, Zhao
Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
title Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
title_full Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
title_fullStr Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
title_full_unstemmed Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
title_short Reliability Analysis of Flip-Chip Packaging GaN Chip with Nano-Silver Solder BUMP
title_sort reliability analysis of flip-chip packaging gan chip with nano-silver solder bump
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10303685/
https://www.ncbi.nlm.nih.gov/pubmed/37374830
http://dx.doi.org/10.3390/mi14061245
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