Enhanced Operational Characteristics Attained by Applying HfO(2) as Passivation in AlGaN/GaN High-Electron-Mobility Transistors: A Simulation Study

This study investigates the operating characteristics of AlGaN/GaN high-electron-mobility transistors (HEMTs) by applying HfO(2) as the passivation layer. Before analyzing HEMTs with various passivation structures, modeling parameters were derived from the measured data of fabricated HEMT with Si(3)...

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Detalles Bibliográficos
Autores principales: Choi, Jun-Hyeok, Kang, Woo-Seok, Kim, Dohyung, Kim, Ji-Hun, Lee, Jun-Ho, Kim, Kyeong-Yong, Min, Byoung-Gue, Kang, Dong Min, Kim, Hyun-Seok
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10304414/
https://www.ncbi.nlm.nih.gov/pubmed/37374686
http://dx.doi.org/10.3390/mi14061101

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10304414/
https://www.ncbi.nlm.nih.gov/pubmed/37374686
http://dx.doi.org/10.3390/mi14061101

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