Lattice Strain Relaxation and Compositional Control in As-Rich GaAsP/(100)GaAs Heterostructures Grown by MOVPE

The fabrication of high-efficiency GaAsP-based solar cells on GaAs wafers requires addressing structural issues arising from the materials lattice mismatch. We report on tensile strain relaxation and composition control of MOVPE-grown As-rich GaAs(1−x)P(x)/(100)GaAs heterostructures studied by doubl...

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Detalles Bibliográficos
Autores principales: Prete, Paola, Calabriso, Daniele, Burresi, Emiliano, Tapfer, Leander, Lovergine, Nico
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10304738/
https://www.ncbi.nlm.nih.gov/pubmed/37374438
http://dx.doi.org/10.3390/ma16124254

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10304738/
https://www.ncbi.nlm.nih.gov/pubmed/37374438
http://dx.doi.org/10.3390/ma16124254

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