Modeling and Validation of Total Ionizing Dose Effect on the TSVs in RF Microsystem

Radio frequency (RF) systems utilizing through-silicon vias (TSVs) have been widely used in the aerospace and nuclear industry, which means that studying the total ionizing dose (TID) effect on TSV structures has become necessary. To investigate the TID effect on TSV structures, a 1D TSV capacitance...

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Detalles Bibliográficos
Autores principales: Yang, Lihong, Li, Zhumeng, Shan, Guangbao, Lu, Qijun, Fu, Yu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305358/
https://www.ncbi.nlm.nih.gov/pubmed/37374765
http://dx.doi.org/10.3390/mi14061180

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305358/
https://www.ncbi.nlm.nih.gov/pubmed/37374765
http://dx.doi.org/10.3390/mi14061180

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