Improved Electrical Characteristics of Field Effect Transistors with GeSeTe-Based Ovonic Threshold Switching Devices

Hyper-field effect transistors (hyper-FETs) are crucial in the development of low-power logic devices. With the increasing significance of power consumption and energy efficiency, conventional logic devices can no longer achieve the required performance and low-power operation. Next-generation logic...

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Detalles Bibliográficos
Autores principales: Lee, Su Yeon, Seo, Hyun Kyu, Jeong, Se Yeon, Yang, Min Kyu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305494/
https://www.ncbi.nlm.nih.gov/pubmed/37374499
http://dx.doi.org/10.3390/ma16124315

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10305494/
https://www.ncbi.nlm.nih.gov/pubmed/37374499
http://dx.doi.org/10.3390/ma16124315

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