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Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

[Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DE...

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Detalles Bibliográficos
Autores principales: Zhou, Jinggui, Do, Huy-Binh, De Souza, Maria Merlyne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308811/
https://www.ncbi.nlm.nih.gov/pubmed/37396055
http://dx.doi.org/10.1021/acsaelm.3c00350