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Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
[Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DE...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
American Chemical Society
2023
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Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308811/ https://www.ncbi.nlm.nih.gov/pubmed/37396055 http://dx.doi.org/10.1021/acsaelm.3c00350 |
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author | Zhou, Jinggui Do, Huy-Binh De Souza, Maria Merlyne |
author_facet | Zhou, Jinggui Do, Huy-Binh De Souza, Maria Merlyne |
author_sort | Zhou, Jinggui |
collection | PubMed |
description | [Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DEG, a greater potential can be dropped across the GaN channel, resulting in enhanced electrostatic control. Therefore, to minimize the deleterious impact on the on-state performance, a composite graded back-to-back AlGaN barrier that enables a trade-off between n-channel devices and Enhancement-mode (E-mode) p-channel is investigated. In simulations, a scaled p-channel GaN device with L(G) = 200 nm, L(SD) = 600 nm achieves an I(ON) of 65 mA/mm, an increase of 44.4% compared to a device with an AlGaN barrier with fixed Al mole fraction, I(ON)/I(OFF) of ∼10(12), and |V(th)| of | – 1.3 V|. For the n-channel device, the back-to-back barrier overcomes the reduction of I(ON) induced by the p-GaN gate resulting in an I(ON) of 860 mA/mm, an increase of 19.7% compared with the counterpart with the conventional barrier with 0.5 V positive V(th) shift. |
format | Online Article Text |
id | pubmed-10308811 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | American Chemical Society |
record_format | MEDLINE/PubMed |
spelling | pubmed-103088112023-06-30 Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN Zhou, Jinggui Do, Huy-Binh De Souza, Maria Merlyne ACS Appl Electron Mater [Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DEG, a greater potential can be dropped across the GaN channel, resulting in enhanced electrostatic control. Therefore, to minimize the deleterious impact on the on-state performance, a composite graded back-to-back AlGaN barrier that enables a trade-off between n-channel devices and Enhancement-mode (E-mode) p-channel is investigated. In simulations, a scaled p-channel GaN device with L(G) = 200 nm, L(SD) = 600 nm achieves an I(ON) of 65 mA/mm, an increase of 44.4% compared to a device with an AlGaN barrier with fixed Al mole fraction, I(ON)/I(OFF) of ∼10(12), and |V(th)| of | – 1.3 V|. For the n-channel device, the back-to-back barrier overcomes the reduction of I(ON) induced by the p-GaN gate resulting in an I(ON) of 860 mA/mm, an increase of 19.7% compared with the counterpart with the conventional barrier with 0.5 V positive V(th) shift. American Chemical Society 2023-06-08 /pmc/articles/PMC10308811/ /pubmed/37396055 http://dx.doi.org/10.1021/acsaelm.3c00350 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Zhou, Jinggui Do, Huy-Binh De Souza, Maria Merlyne Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN |
title | Impact of an Underlying
2DEG on the Performance of
a p-Channel MOSFET in GaN |
title_full | Impact of an Underlying
2DEG on the Performance of
a p-Channel MOSFET in GaN |
title_fullStr | Impact of an Underlying
2DEG on the Performance of
a p-Channel MOSFET in GaN |
title_full_unstemmed | Impact of an Underlying
2DEG on the Performance of
a p-Channel MOSFET in GaN |
title_short | Impact of an Underlying
2DEG on the Performance of
a p-Channel MOSFET in GaN |
title_sort | impact of an underlying
2deg on the performance of
a p-channel mosfet in gan |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308811/ https://www.ncbi.nlm.nih.gov/pubmed/37396055 http://dx.doi.org/10.1021/acsaelm.3c00350 |
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