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Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

[Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DE...

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Autores principales: Zhou, Jinggui, Do, Huy-Binh, De Souza, Maria Merlyne
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308811/
https://www.ncbi.nlm.nih.gov/pubmed/37396055
http://dx.doi.org/10.1021/acsaelm.3c00350
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author Zhou, Jinggui
Do, Huy-Binh
De Souza, Maria Merlyne
author_facet Zhou, Jinggui
Do, Huy-Binh
De Souza, Maria Merlyne
author_sort Zhou, Jinggui
collection PubMed
description [Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DEG, a greater potential can be dropped across the GaN channel, resulting in enhanced electrostatic control. Therefore, to minimize the deleterious impact on the on-state performance, a composite graded back-to-back AlGaN barrier that enables a trade-off between n-channel devices and Enhancement-mode (E-mode) p-channel is investigated. In simulations, a scaled p-channel GaN device with L(G) = 200 nm, L(SD) = 600 nm achieves an I(ON) of 65 mA/mm, an increase of 44.4% compared to a device with an AlGaN barrier with fixed Al mole fraction, I(ON)/I(OFF) of ∼10(12), and |V(th)| of | – 1.3 V|. For the n-channel device, the back-to-back barrier overcomes the reduction of I(ON) induced by the p-GaN gate resulting in an I(ON) of 860 mA/mm, an increase of 19.7% compared with the counterpart with the conventional barrier with 0.5 V positive V(th) shift.
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spelling pubmed-103088112023-06-30 Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN Zhou, Jinggui Do, Huy-Binh De Souza, Maria Merlyne ACS Appl Electron Mater [Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DEG, a greater potential can be dropped across the GaN channel, resulting in enhanced electrostatic control. Therefore, to minimize the deleterious impact on the on-state performance, a composite graded back-to-back AlGaN barrier that enables a trade-off between n-channel devices and Enhancement-mode (E-mode) p-channel is investigated. In simulations, a scaled p-channel GaN device with L(G) = 200 nm, L(SD) = 600 nm achieves an I(ON) of 65 mA/mm, an increase of 44.4% compared to a device with an AlGaN barrier with fixed Al mole fraction, I(ON)/I(OFF) of ∼10(12), and |V(th)| of | – 1.3 V|. For the n-channel device, the back-to-back barrier overcomes the reduction of I(ON) induced by the p-GaN gate resulting in an I(ON) of 860 mA/mm, an increase of 19.7% compared with the counterpart with the conventional barrier with 0.5 V positive V(th) shift. American Chemical Society 2023-06-08 /pmc/articles/PMC10308811/ /pubmed/37396055 http://dx.doi.org/10.1021/acsaelm.3c00350 Text en © 2023 The Authors. Published by American Chemical Society https://creativecommons.org/licenses/by/4.0/Permits the broadest form of re-use including for commercial purposes, provided that author attribution and integrity are maintained (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Zhou, Jinggui
Do, Huy-Binh
De Souza, Maria Merlyne
Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
title Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
title_full Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
title_fullStr Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
title_full_unstemmed Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
title_short Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
title_sort impact of an underlying 2deg on the performance of a p-channel mosfet in gan
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308811/
https://www.ncbi.nlm.nih.gov/pubmed/37396055
http://dx.doi.org/10.1021/acsaelm.3c00350
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