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Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN
[Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DE...
| Autores principales: | , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308811/ https://www.ncbi.nlm.nih.gov/pubmed/37396055 http://dx.doi.org/10.1021/acsaelm.3c00350 |