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Impact of an Underlying 2DEG on the Performance of a p-Channel MOSFET in GaN

[Image: see text] The influence of an underlying 2-dimensional electron gas (2DEG) on the performance of a normally off p-type metal oxide semiconductor field effect transistor (MOSFET) based on GaN/AlGaN/GaN double heterojunction is analyzed via simulations. By reducing the concentration of the 2DE...

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Detalles Bibliográficos
Autores principales:	Zhou, Jinggui, Do, Huy-Binh, De Souza, Maria Merlyne
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	American Chemical Society 2023
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308811/ https://www.ncbi.nlm.nih.gov/pubmed/37396055 http://dx.doi.org/10.1021/acsaelm.3c00350

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