Trade-off between Gradual Set and On/Off Ratio in HfO(x)-Based Analog Memory with a Thin SiO(x) Barrier Layer

[Image: see text] HfO(x)-based synapses are widely accepted as a viable candidate for both in-memory and neuromorphic computing. Resistance change in oxide-based synapses is caused by the motion of oxygen vacancies. HfO(x)-based synapses typically demonstrate an abrupt nonlinear resistance change un...

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Detalles Bibliográficos
Autores principales: Athena, Fabia F., West, Matthew P., Hah, Jinho, Graham, Samuel, Vogel, Eric M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308818/
https://www.ncbi.nlm.nih.gov/pubmed/37396057
http://dx.doi.org/10.1021/acsaelm.3c00131

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308818/
https://www.ncbi.nlm.nih.gov/pubmed/37396057
http://dx.doi.org/10.1021/acsaelm.3c00131

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