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Trade-off between Gradual Set and On/Off Ratio in HfO(x)-Based Analog Memory with a Thin SiO(x) Barrier Layer
[Image: see text] HfO(x)-based synapses are widely accepted as a viable candidate for both in-memory and neuromorphic computing. Resistance change in oxide-based synapses is caused by the motion of oxygen vacancies. HfO(x)-based synapses typically demonstrate an abrupt nonlinear resistance change un...
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
American Chemical Society
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10308818/ https://www.ncbi.nlm.nih.gov/pubmed/37396057 http://dx.doi.org/10.1021/acsaelm.3c00131 |