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Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip
We present a simple and cost-effective fabrication technique for on-chip integration of pure edge contact two-terminal (2T) and Graphene field effect transistor (GFET) devices with low contact resistance and nonlinear characteristics based on single-layer chemical-vapor-deposited (CVD) graphene. We...
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10313717/ https://www.ncbi.nlm.nih.gov/pubmed/37391542 http://dx.doi.org/10.1038/s41598-023-37487-1 |