From Layer-by-Layer Growth to Nanoridge Formation: Selective Area Epitaxy of GaAs by MOVPE

[Image: see text] Selective area epitaxy at the nanoscale enables fabrication of high-quality nanostructures in regular arrays with predefined geometry. Here, we investigate the growth mechanisms of GaAs nanoridges on GaAs (100) substrates in selective area trenches by metal–organic vapor-phase epit...

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Detalles Bibliográficos
Autores principales: Morgan, Nicholas, Dubrovskii, Vladimir G., Stief, Ann-Kristin, Dede, Didem, Sanglé-Ferrière, Marie, Rudra, Alok, Piazza, Valerio, Fontcuberta i Morral, Anna
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10326851/
https://www.ncbi.nlm.nih.gov/pubmed/37426543
http://dx.doi.org/10.1021/acs.cgd.3c00316

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10326851/
https://www.ncbi.nlm.nih.gov/pubmed/37426543
http://dx.doi.org/10.1021/acs.cgd.3c00316

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