Nanostars in Highly Si-Doped GaN

[Image: see text] Understanding the relation between surface morphology during epitaxy of GaN:Si and its electrical properties is important from both the fundamental and application perspectives. This work evidences the formation of nanostars in highly doped GaN:Si layers with doping level ranging f...

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Detalles Bibliográficos
Autores principales: Sawicka, Marta, Turski, Henryk, Sobczak, Kamil, Feduniewicz-Żmuda, Anna, Fiuczek, Natalia, Gołyga, Oliwia, Siekacz, Marcin, Muziol, Grzegorz, Nowak, Grzegorz, Smalc-Koziorowska, Julita, Skierbiszewski, Czesław
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Chemical Society 2023
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10326854/
https://www.ncbi.nlm.nih.gov/pubmed/37426547
http://dx.doi.org/10.1021/acs.cgd.3c00317

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10326854/
https://www.ncbi.nlm.nih.gov/pubmed/37426547
http://dx.doi.org/10.1021/acs.cgd.3c00317

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